| \? 1N5615GP, 1N5617GP, 1N5619GP,1N5621GP,1N5623GP7 WWw'ViShay'C°m ViShayGenera|Semiconductor 10 Pulse Width : 300 us0-‘ 1 D/D Duty Cycle jjjlllllE Z3 _8 1-:E -I8 j—:0 :_0 :—jj5 %E:2a '6 instantaneous FonNard Current (A) 0 01 0.4 06 08 1.0 1.2 1.4 16Instantaneous Forward Voltage (V) Reverse Voltage MFig. 3 - Typical Instantaneous FonNard Characteristics Fig. 5 - Typical Junction Capacitance 100 100 a 10 0.1 instantaneous Reverse Current (UA) Typical Thermal impedance (°C/W)0.1 1 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE ouTLINE DIMENSIONS in inches (millimeters) Do—204Ac (Do—15) 0.034 (0.05) 0.028 (0.71) f DIA 1 0 (25.4) MlN. Ll 0.300 (7.61 0.230 (5.81 l [ 4_‘ L7 0.140(3.a) 0.104 (2.5) 01A. 1 o(25.A) MlN. LRevision: 11-Dec-13 3 Document Number: 88522 For technical questions within your region: DiodesArnericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vIshay.oom/ooc?91000 |